Defect Profiling of Oxide‐Semiconductor Interfaces Using Low‐Energy Muons

Muon spin rotation with low-energy muons (LE-µSR) is a powerful nuclear method where electrical and magnetic properties of surface-near regions thin films can be studied on length scale ≈200 nm. This study shows the potential utilizing for depth-resolved characterization oxide-semiconductor interfaces, i.e., silicon (Si) carbide (4H-SiC). The performance semiconductor devices relies heavily quality interface; thus, investigation defects present in this region crucial to improve technology. Silicon dioxide (SiO2) deposited by plasma-enhanced chemical vapor deposition (PECVD) grown thermal oxidation SiO2-semiconductor interface are compared respect defect formation. nanometer depth resolution LE-µSR allows clear distinction between oxide layers, while also quantifying extension structural changes caused both Si SiC. results demonstrate that reveal unprecedented details electronic thermally oxidized interface.